English | Español | 30/07/2010

 

• Technologies
• Integrated Chips
• Radio-Fibre Solutions
• Spectral Monitoring
• Radio-Fibre links
• Wireless networks
• WiMAX Antenna Systems
• Optical interconnects
• Integrated devices

DAS Photonics designs and develops integrated photonic devices using silicon nanofabrication processes (CMOS). The company has expertise in integrated technologies for the implementation of metamaterials, nanowires, and photonic crystals. These structures are made from various optical materials for a wide range of applications.

The use of high index contrast structures leads to a tighter control of light and gives rise to novel and highly integrated applications. As a result, intricate circuits with complex functionalities can be reduced in size. This technology also enables cheaper manufacturing techniques to be used. Our integrated photonic technologies include:

• Ultra high index contrast technology: using SOI (silicon on insulator) technology that is based on silicon guiding structures. SiN and CdTe technologies are also used.
  
• High index contrast technology: used in applications where integration levels can be relaxed – including structures with small index contrasts employing SiO2 or polymer waveguides. In addition, by using SiON technology, the index contrast can be tuned from high to ultra-high index values.
  
• Metallization: used with metal structures for the introduction of electrical control electrodes and the implementation of metamaterials or SPR (surface plasmon resonant) structures.