SITOGA – SILICON CMOS COMPATIBLE TRANSITION METAL OXIDE TECHNOLOGY FOR BOOSTING HIGHLY INTEGRATED PHOTONIC DEVICES WITH DISRUPTIVE PERFORMANCE –

Silicon CMOS compatible transition metal oxide technology for boosting highly integrated photonic devices with disruptive performance

Nº expediente FP7-ICT-2013-11 - 619456

Objetivos: the project aims to develop new technology which will contribute to improve data communication performances. The key is the use of two new materials -barium titanate and vanadium oxide- to develop electro-optic devices, such as switches and modulators, key building blocks in communication systems.

Participantes: CNRS, KU Leuven, IHP GMBH, IBM, DAS PHOTONICS.